Plasma-resistant member

ABSTRACT

According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

TECHNICAL FIELD

An aspect of the invention generally relates to a plasma-resistantmember, and specifically relates to a plasma-resistant member used in asemiconductor manufacturing apparatus that performs processing such asdry etching, sputtering, CVD, etc., inside a chamber.

BACKGROUND ART

In the manufacturing processes of a semiconductor, it is necessary toreduce particles of a patterning object and increase the yield byreducing discrepancies of the manufactured device.

Conversely, there is a manufacturing apparatus of an electronic devicein which the ceiling of the chamber includes quartz glass and theaverage surface roughness of a micro uneven portion formed in the innersurface of the ceiling is 0.2 to 5 μm (Patent Document 1). There is aplasma-resistant member in which pores (holes) or a grain boundary layerdo not exist and the occurrence of particle detachment from theplasma-resistant member is suppressed/reduced (Patent Document 2). Thereis a part of a plasma reactor including a covering film of a ceramic, apolymer material, etc., that is plasma thermal-sprayed on the surfacesof the part of the plasma reactor exposed to the plasma and has surfaceroughness characteristics that promote the adhesion of polymer deposits(Patent Document 3). According to the part of the plasma reactordescribed in Patent Document 3, the particle contamination in theprocessing can be reduced. There is a plasma-resistant member in which acorrosion-resistant surface layer made of at least one type of afluoride, oxide, or nitride of a metal is formed on the surface of abase body made of a silicon nitride sintered body with an interposedintermediate layer made of SiO₂ or a hybrid oxide of silicon and anelement of Group 3a of the periodic table (Patent Document 4). Accordingto the plasma-resistant member described in Patent Document 4, becausethe silicon nitride sintered body has a lower loss and high strength,the corrosion resistance is improved further; and the reliability withregard to damage increases.

In the manufacturing processes of the semiconductor, there are caseswhere the interior wall of the chamber is covered substantiallyuniformly with a pre-coated film (a covering film) to reduce theparticles. The pre-coated film is formed of a material that does nothave a negative effect on the semiconductor device. In the case wherethe interior wall of the chamber is covered substantially uniformly withthe covering film, it is necessary to increase the adhesion strength oradhesion force of the covering film so that the covering film does notpeel easily. Also, it is necessary for the covering film that covers theinterior of the chamber to cause the reaction products, the particles,etc., to adhere to the surface of the covering film itself and betrapped even when the reaction products, the particles, etc., areproduced inside the chamber. Recently, finer patterns of semiconductordevices are progressing; and the control of nanolevel particles isnecessary.

CITATION LIST Patent Literature

[Patent Citation 1] JP 3251215

[Patent Citation 2] JP 3864958

[Patent Citation 3] JP 2012-54590 A (Kokai)

[Patent Citation 4] JP 2001-240482 A (Kokai)

SUMMARY OF INVENTION Problem to be Solved by the Invention

A plasma-resistant member that can increase the adhesion strength oradhesion force of the covering film that covers the interior wall of thechamber or that can reduce the particles is to be provided.

Means for Solving the Problem

According to an aspect of the invention, there is provided aplasma-resistant member including: a base member; and a layer structuralcomponent formed at a surface of the base member, the layer structuralcomponent including an yttria polycrystalline body and being plasmaresistant, the layer structural component including a first unevenstructure, and a second uneven structure formed to be superimposed ontothe first uneven structure, the second uneven structure having anunevenness finer than an unevenness of the first uneven structure.

According to another aspect of the invention, there is provided aplasma-resistant member including a base member; and a layer structuralcomponent formed at a surface of the base member, the layer structuralcomponent including an yttria polycrystalline body and being plasmaresistant, in the case where a cut-off of surface analysis is 0.8 μm:the arithmetic average Sa of a surface of the layer structural componentbeing not less than 0.010 μm and not more than 0.035 μm; the corematerial volume Vmc determined from a load curve of the surface of thelayer structural component being not less than 0.01 μm³/μm² and not morethan 0.035 μm³/μm²; the core void volume Vvc determined from the loadcurve of the surface of the layer structural component is not less than0.012 μm³/μm² and not more than 0.05 μm³/μm²; the developed interfacialarea ratio Sdr of the surface of the layer structural component is notless than 1 and not more than 17; and the root mean square slope SΔq ofthe surface of the layer structural component is not less than 0.15 andnot more than 0.6.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view showing a semiconductormanufacturing apparatus including a plasma-resistant member according toan embodiment of the invention.

FIG. 2 is a schematic view showing an example of the manufacturingprocesses of the semiconductor.

FIG. 3 shows photographs of surfaces of the layer structural componentformed at the surface of the plasma-resistant member.

FIG. 4A to FIG. 4F are photographs of enlarged surfaces of the layerstructural component formed at the surface of the plasma-resistantmember.

FIG. 5A and FIG. 5B are photographs showing cross sections of the layerstructural component formed at the surface of the plasma-resistantmember.

FIG. 6A and FIG. 6B are photographs showing other surfaces of the layerstructural component formed at the surface of the plasma-resistantmember.

FIG. 7A to FIG. 7C are schematic views describing three-dimensionalsurface texture parameters.

FIG. 8 is a graph of the arithmetic average of the surface of the layerstructural component.

FIG. 9 is a graph of the core material volume of the surface of thelayer structural component.

FIG. 10 is a graph of the core void volume of the surface of the layerstructural component.

FIG. 11 is a graph of the density of the protrusion summits of thesurface of the layer structural component.

FIG. 12A and FIG. 12B are graphs of the developed interfacial area ratioof the surface of the layer structural component.

FIG. 13 is a photograph in which the state of the interior of the layerstructural component of the embodiment is imaged.

FIG. 14 is a photograph in which the internal structure of the layerstructural component of the embodiment is binarized.

FIG. 15A to FIG. 15E are photographs in which the state of the upperportion of the layer structural component of the embodiment is imaged.

FIG. 16A and FIG. 16B are a graph and a table showing an example of thesurface area ratio with respect to the depth position.

FIG. 17 is a schematic perspective view describing the method formeasuring the adhesion strength of the pre-coated film.

FIG. 18A to FIG. 18D are photographs describing the method for measuringthe adhesion strength of the pre-coated film.

FIG. 19A and FIG. 19B are photographs showing optical microscopephotographs.

FIG. 20A and FIG. 20B are photographs in which the peeling region isimaged by SEM.

FIG. 21A and FIG. 21B are a table and a graph of an example of themeasurement results of the adhesion strength of the pre-coated film.

FIG. 22A and FIG. 22B are graphs describing the cut-off of the surfaceanalysis.

FIG. 23A and FIG. 23B are graphs of the arithmetic average of thesurface of the layer structural component.

FIG. 24A and FIG. 24B are graphs of the core material volume of thesurface of the layer structural component.

FIG. 25A and FIG. 25B are graphs of the core void volume of the surfaceof the layer structural component.

FIG. 26A and FIG. 26B are graphs of the developed interfacial area ratioof the surface of the layer structural component.

FIG. 27A and FIG. 27B are graphs of the root mean square slope of thesurface of the layer structural component.

FIG. 28 is a table showing an example of the measurement result of theadhesion strength of the pre-coated film.

FIG. 29 is a photograph in which the interior of the layer structuralcomponent of the embodiment is imaged.

FIG. 30 is a table comparing the average crystal particle sizes fordifferent methods for forming the layer structural component.

FIG. 31 is a graph of an example of the results of XRD measurements ofthe layer structural component formed by aerosol deposition.

FIG. 32 is a photograph in which another part of the interior of thelayer structural component of the embodiment is imaged.

DESCRIPTION OF EMBODIMENT

A first invention is a plasma-resistant member including a base member,and a layer structural component formed at a surface of the base member,the layer structural component including an yttria polycrystalline bodyand being plasma-resistant, the layer structural component having afirst uneven structure and a second uneven structure, the second unevenstructure being formed to be superimposed onto the first unevenstructure and having an unevenness finer than an unevenness of the firstuneven structure.

According to this plasma-resistant member, the interior wall of achamber can be covered substantially uniformly with a pre-coated film (acovering film) that does not have a negative effect on the semiconductordevice to reduce the particles produced in the manufacturing processesof a semiconductor. The adhesion strength or adhesion force of thecovering film can be increased. The layer structural component has astructure (a structure similar to a fractal structure) in which thesecond uneven structure is formed to be superimposed onto the firstuneven structure. Therefore, an anchor effect due to the fine unevenstructure is obtained; and a stable adhesion strength or adhesion forcefor the base member can be obtained. The covering film that is formed onthe layer structural component for which the anchor effect is obtainedcan cause the reaction products, the particles, etc., to adhere to thesurface of the covering film itself and be trapped with highercertainty. Thereby, the particles that are produced in the manufacturingprocesses of the semiconductor can be reduced.

A second invention is the plasma-resistant member of the firstinvention, wherein the first uneven structure has voids made in aportion of a surface of the layer structural component, the voids arewhere groups of crystal particles detached, the second uneven structurehas an unevenness formed in the entire surface of the layer structuralcomponent, and a size of the crystal particles of the unevenness isfine.

According to this plasma-resistant member, an anchor effect due to thefine uneven structure is obtained over substantially the entire surfaceof the layer structural component; and a more a stable adhesion strengthor adhesion force for the base member can be obtained. A covering filmthat is formed on the layer structural component for which the anchoreffect is obtained can cause the reaction products, the particles, etc.,to adhere to the surface of the covering film itself and be trapped withhigher certainty. Thereby, the particles that are produced in themanufacturing processes of the semiconductor can be reduced.

A third invention is the plasma-resistant member of the first invention,wherein the arithmetic average Sa of a surface of the layer structuralcomponent is not less than 0.025 μm and not more than 0.075 μm, the corematerial volume Vmc determined from a load curve of the surface of thelayer structural component is not less than 0.03 μm³/μm² and not morethan 0.08 μm³/μm², the core void volume Vvc determined from the loadcurve of the surface of the layer structural component is not less than0.03 m³/μm² and not more than 0.1 m³/μm², and the developed interfacialarea ratio Sdr of the surface of the layer structural component is notless than 3 and not more than 28.

According to this plasma-resistant member, the three-dimensional surfacetexture of the surface of the layer structural component becomes moredistinct. Thereby, the adhesion strength or adhesion force of thecovering film can be increased further. The covering film can cause thereaction products, the particles, etc., to adhere to the surface of thecovering film itself and be trapped with higher certainty. Thereby, theparticles that are produced in the manufacturing processes of thesemiconductor can be reduced further.

A fourth invention is the plasma-resistant member of the firstinvention, wherein the first uneven structure and the second unevenstructure are formed by performing chemical processing.

According to this plasma-resistant member, the adhesion strength oradhesion force of the covering film is increased; and the first unevenstructure and the second uneven structure that are more favorable forreducing the particles can be obtained.

A fifth invention is the plasma-resistant member of the first invention,wherein the layer structural component has a sparse and dense structureof the yttria polycrystalline body.

In the case where the interior wall of the chamber is covered with acovering film, it is necessary to increase the adhesion strength oradhesion force of the covering film so that the covering film does notpeel easily.

Conversely, according to the plasma-resistant member of the invention,the first uneven structure and the second uneven structure are formedeasily because the layer structural component has the sparse and densestructure of the yttria polycrystalline body. In other words, the firstuneven structure is formed easily in the portions where the density issparse. Therefore, it is considered that the second uneven structure iseasily formed to be superimposed onto the first uneven structure.Thereby, the adhesion strength or adhesion force of the covering filmcan be increased.

A sixth invention is the plasma-resistant member of the fifth invention,wherein the sparse portions of the sparse and dense structure becomesmaller from a layer at a surface of the layer structural componenttoward a layer deeper than the layer at the surface.

In the case where the interior wall of a chamber is covered with acovering film, it is necessary to increase the adhesion strength oradhesion force of the covering film so that the covering film does notpeel easily.

Conversely, according to the plasma-resistant member of the invention,the sparse portions of the sparse and dense structure become smallerfrom the layer at the surface of the layer structural component towardthe layer deeper than the layer of the surface. Therefore, the recess ofthe fine uneven structure is formed easily at the layer deeper than thelayer at the surface of the layer structural component. Thereby, theanchor effect is obtained; and a stable adhesion strength or adhesionforce for the base member can be obtained.

A seventh invention is the plasma-resistant member of the fifthinvention, wherein the sparse and dense structure includes sparseportions distributed three-dimensionally inside a dense portion, and adensity of the sparse portions is lower than a density of the denseportion.

According to this plasma-resistant member, the sparse and densestructure is distributed three-dimensionally at the surface and in thethickness direction (the depth direction) of the stacked structuralcomponent. Therefore, the adhesion strength or adhesion force of thecovering film can be increased further.

An eighth invention is the plasma-resistant member of the firstinvention, wherein the layer structural component is formed by aerosoldeposition.

According to this plasma-resistant member, the layer structuralcomponent has a dense structure compared to an yttria sintered body, anyttria thermal-sprayed film, etc. Thereby, the plasma resistance of theplasma-resistant member is higher than the plasma resistances of thesintered body, the thermal-sprayed film, etc. The probability of theplasma-resistant member being a production source of particles is lowerthan the probability of the sintered body, the thermal-sprayed film,etc., being production sources of particles. Thereby, the particles canbe reduced while maintaining the plasma resistance of theplasma-resistant member.

A ninth invention is a plasma-resistant member including a base member,and a layer structural component formed at a surface of the base member,the layer structural component including an yttria polycrystalline bodyand being plasma-resistant; and in the case where a cut-off of surfaceanalysis is 0.8 μm, the arithmetic average Sa of a surface of the layerstructural component is not less than 0.010 μm and not more than 0.035μm, the core material volume Vmc determined from a load curve of thesurface of the layer structural component is not less than 0.01 m³/μm²and not more than 0.035 μm³/μm², the core void volume Vvc determinedfrom the load curve of the surface of the layer structural component isnot less than 0.012 μm³/μm² and not more than 0.05 μm³/μm², thedeveloped interfacial area ratio Sdr of the surface of the layerstructural component is not less than 1 and not more than 17, and theroot mean square slope SΔq of the surface of the layer structuralcomponent is not less than 0.15 and not more than 0.6.

According to this plasma-resistant member, the interior wall of achamber can be covered substantially uniformly with a pre-coated film (acovering film) that does not have a negative effect on the semiconductordevice to reduce the particles produced in the manufacturing processesof the semiconductor. Also, the adhesion strength or adhesion force ofthe covering film can be increased.

A tenth invention is the plasma-resistant member of the ninth invention,wherein the layer structural component has a sparse and dense structureof the yttria polycrystalline body.

In the case where the interior wall of a chamber is covered with acovering film, it is necessary to increase the adhesion strength oradhesion force of the covering film so that the covering film does notpeel easily.

Conversely, according to the plasma-resistant member of the invention,the first uneven structure and the second uneven structure are formedeasily because the layer structural component has the sparse and densestructure of the yttria polycrystalline body. In other words, the firstuneven structure is formed easily at the portions where the density issparse.

Therefore, it is considered that the second uneven structure is easilyformed to be superimposed onto the first uneven structure. Thereby, theadhesion strength or adhesion force of the covering film can beincreased.

An eleventh invention is the plasma-resistant member of the tenthinvention, wherein sparse portions of the sparse and dense structurebecome smaller from a layer at the surface of the layer structuralcomponent toward a layer deeper than the layer at the surface.

In the case where the interior wall of a chamber is covered with acovering film, it is necessary to increase the adhesion strength oradhesion force of the covering film so that the covering film does notpeel easily.

Conversely, according to the plasma-resistant member of the invention,the sparse portions of the sparse and dense structure become smallerfrom the layer at the surface of the layer structural component towardthe layer deeper than the layer of the surface. Therefore, the recess ofthe fine uneven structure is formed easily at the layer deeper than thelayer at the surface of the layer structural component. Thereby, theanchor effect is obtained; and a stable adhesion strength or adhesionforce for the base member can be obtained.

A twelfth invention is the plasma-resistant member of the tenthinvention, wherein the sparse and dense structure includes sparseportions distributed three-dimensionally inside a dense portion, and adensity of the sparse portions is lower than a density of the denseportion.

According to this plasma-resistant member, the sparse and densestructure is distributed three-dimensionally at the surface and in thethickness direction (the depth direction) of the stacked structuralcomponent. Therefore, the adhesion strength or adhesion force of thecovering film can be increased further.

A thirteenth invention is the plasma-resistant member of the ninthinvention, wherein the layer structural component is formed by aerosoldeposition.

According to this plasma-resistant member, the layer structuralcomponent has a dense structure compared to an yttria sintered body, anyttria thermal-sprayed film, etc. Thereby, the plasma resistance of theplasma-resistant member is higher than the plasma resistances of thesintered body, the thermal-sprayed film, etc. The probability of theplasma-resistant member being a production source of particles is lowerthan the probability of the sintered body, the thermal-sprayed film,etc., being production sources of particles. Thereby, the particles canbe reduced while maintaining the plasma resistance of theplasma-resistant member.

Embodiments of the invention will now be described with reference to thedrawings. Similar components in the drawings are marked with likereference numerals, and a detailed description is omitted asappropriate.

FIG. 1 is a schematic cross-sectional view showing a semiconductormanufacturing apparatus including a plasma-resistant member according toan embodiment of the invention.

FIG. 2 is a schematic view showing an example of the manufacturingprocesses of the semiconductor.

The semiconductor manufacturing apparatus 100 shown in FIG. 1 includes achamber 110, a plasma-resistant member 120, and an electrostatic chuck160. The plasma-resistant member 120 is called, for example, the topplate, etc., and is provided at the upper portion in the interior of thechamber 110. The electrostatic chuck 160 is provided at the lowerportion in the interior of the chamber 110. That is, theplasma-resistant member 120 is provided on the electrostatic chuck 160in the interior of the chamber 110. An object to be held such as a wafer210 or the like is placed on the electrostatic chuck 160.

For example, the plasma-resistant member 120 has a structure in which alayer structural component 123 that includes an yttria (Y₂O₃)polycrystalline body (referring to FIG. 5A and FIG. 5B) is formed on thesurface of a base member 121 that includes alumina (Al₂O₃) (referring toFIG. 5A and FIG. 5B). The layer structural component 123 of the yttriapolycrystalline body is formed by aerosol deposition. The material ofthe base member 121 is not limited to a ceramic such as alumina, etc.,and may be quartz, alumite, a metal, glass, etc.

Aerosol deposition is a method for squirting an aerosol including fineparticles including a brittle material dispersed in a gas from a nozzletoward the base member 121 such as a metal, glass, ceramic, plastic,etc., causing the fine particles to collide with the base member 121,and causing the brittle material fine particles to deform, fragment, andbond due to the impact of the collisions to directly form the layerstructural component (also called the film structural component) 123made of the constituent material of the fine particles on the basemember 121. According to this method, a heating unit, a cooling unit, orthe like is not particularly necessary; it is possible to form the layerstructural component 123 at room temperature; and the layer structuralcomponent 123 that has a mechanical strength equal to or greater thanthat of a sintered body can be obtained. It is possible to diverselychange the density, the mechanical strength, the electricalcharacteristics, etc., of the layer structural component 123 bycontrolling the configuration and composition of the fine particles, theconditions of causing the fine particles to collide, etc.

In the specification of the application, “polycrystal” refers to astructural body in which crystal particles are bonded/integrated. Acrystal substantially includes one crystal particle. However, thecrystal particles are a polycrystal in the case where fine particles areassimilated into the structural component without fragmenting. Normally,the diameter of the average crystal particle is not less than 5nanometers (nm) and not more than 50 nm. It is more favorable for thediameter of the average crystal particle to be 30 nm or less. Forexample, the diameter of the average crystal particle can be calculatedby the Scherrer method using XRD (X-ray Diffraction) analysis, etc.

In the specification of the application, in the case where the primaryparticle is a dense particle, “fine particle” refers to a particlehaving an average particle diameter of 5 micrometers (μm) or less whenthe average particle diameter is identified by a particle sizedistribution measurement, a scanning electron microscope, etc. In thecase where the primary particle is a porous particle easily fragmentedby impacting, “fine particle” refers to a particle having an averageparticle diameter of 50 μm or less.

In the specification of the application, “aerosol” refers to a solid-gasmixed phase substance in which the fine particles described above aredispersed in a gas such as helium, nitrogen, argon, oxygen, dry air, agas mixture including such elements, etc.; and although there are caseswhere an agglomerate is included, “aerosol” refers to the state in whichthe fine particles are dispersed substantially solitarily. Although thegas pressure and temperature of the aerosol are arbitrary, for theformation of the layer structural component 123, it is desirable for theconcentration of the fine particles inside the gas when squirted fromthe dispensing aperture to be within the range of 0.0003 mL/L to 5 mL/Lwhen converted to a gas pressure of 1 atmosphere and a temperature of 20degrees Celsius.

One feature of the process of aerosol deposition is that the processnormally is implemented at room temperature, and it is possible to formthe layer structural component 123 at a temperature that is sufficientlylower than the melting point of the fine particle material, that is,several hundred degrees Celsius or less.

In the specification of the application, “room temperature” refers to atemperature that is markedly lower than the sintering temperature of aceramic and refers to a room temperature environment of substantially 0to 100° C.

For the fine particles included in the powder body used as the sourcematerial of the layer structural component 123, a brittle material suchas a ceramic, a semiconductor, etc., may be used as a major body, andfine particles of the same material may be used alone or fine particleshaving different particle diameters may be mixed; and it is possible tomix and combine different types of brittle material fine particles. Itis possible to use fine particles of a metal material, an organicmaterial, etc., by mixing the fine particles of the metal material, theorganic material, etc., with the brittle material fine particles andcoating the fine particles of the metal material, the organic material,etc., onto the surfaces of the brittle material fine particles. Even insuch cases, the brittle material is the major part of the formation ofthe layer structural component 123.

In the specification of the application, “powder body” refers to thestate in which the fine particles described above are naturallycoalesced.

For the hybrid structural component formed by such methods, in the casewhere crystalline brittle material fine particles are used as the sourcematerial, the portion of the layer structural component 123 of thehybrid structural component is a polycrystalline body having a smallcrystal particle size compared to the source material fine particles;and there are many cases where the crystals of the polycrystalline bodyhave substantially no crystal orientation. A grain boundary layer thatis made of a glass layer substantially does not exist at the interfacebetween the brittle material crystals. In many cases, the layerstructural component 123 portion of the hybrid structural componentforms an anchor layer that juts into the surface of the base member 121.The layer structural component 123 in which the anchor layer is formedis adhered securely to the base member 121 with exceedingly highstrength.

The layer structural component 123 that is formed by aerosol depositionpossesses sufficient strength and is clearly different from a so-calledpowder compact in which the form of the fine particles packed togetheris maintained by being physical adhered by pressure.

In aerosol deposition, it can be confirmed thatfragmentation/deformation occurs for the brittle material fine particlesflying onto the base member 121 by using X-ray analysis, etc., tomeasure the size of the brittle material fine particles used as thesource material and the size of the crystallites (crystal particles) ofthe brittle material structural component that is formed. In otherwords, the crystallite size of the layer structural component 123 formedby aerosol deposition is smaller than the crystallite size of the sourcematerial fine particles. New major surfaces are formed at the shiftsurfaces and the fracture surfaces formed by the fine particlesfragmenting and deforming; and the new major surfaces are in the statein which atoms that were in the interior of the fine particle and bondedto other atoms are exposed. It is considered that the layer structuralcomponent 123 is formed by the new major surfaces which are active andhave high surface energy being bonded to the surfaces of adjacentbrittle material fine particles, adjacent new major surfaces of thebrittle material, or the surface of the base member 121.

In the case where an appropriate amount of hydroxide groups exist at thesurfaces of the fine particles inside the aerosol, it also may beconsidered that the bonding occurs due to mechano-chemical acid-basedehydration reactions occurring due to local shifting stress, etc.,between the fine particles or between the structural component and thefine particles when the fine particles collide. It is considered thatadding a continuous mechanical impact force from the outside causesthese phenomena to occur continuously; the progression and densificationof the bonds occur due to the repetition of the deformation,fragmentation, etc., of the fine particles; and the layer structuralcomponent 123 that is made of the brittle material grows.

In the semiconductor manufacturing apparatus 100, high frequency poweris supplied; and, for example, a source gas of a halogen-based gas,etc., is introduced to the interior of the chamber 110 as illustrated byarrow A1 shown in FIG. 1. Then, the source gas that is introduced to theinterior of the chamber 110 is plasmatized in a region 191 between theelectrostatic chuck 160 and the plasma-resistant member 120.

The plasma-resistant member 120 is one of the important members forgenerating high-density plasma. If particles 221 produced in theinterior of the chamber 110 adhere to the wafer 210, discrepancies mayoccur in the semiconductor device that is manufactured. Then, the yieldand productivity of the semiconductor device may decrease. Therefore,plasma resistance is necessary for the plasma-resistant member 120.

Therefore, for example, in the manufacturing processes of thesemiconductor as shown in FIG. 2, there are cases where the interiorwall of the chamber 110 is covered with a pre-coated film (hereinbelow,also called a “covering film” for convenience of description) to reducethe particles 221. In such a case, the pre-coated film is formed of amaterial that does not have a negative effect on the semiconductordevice. In other words, for the manufacturing processes of thesemiconductor shown in FIG. 2, first, the interior wall of the chamber110 is covered with the covering film to reduce the particles 221 (stepS101). Continuing, the wafer 210 is introduced to the interior of thechamber 110 (step S103); and the wafer 210 is attracted and held by theelectrostatic chuck 160 (step S105).

Continuing, etching is performed (step S107); the wafer 210 is detachedfrom the electrostatic chuck 160 (step S109); and the wafer 210 isdispatched outside the chamber 110 (step S111). Continuing, cleaning ofthe interior of the chamber 110 is performed by generating plasma in theinterior of the chamber 110 (step S113). Then, the operation describedabove in regard to step S101 is performed again (step S101).

According to knowledge obtained by the inventor, it is considered thatthe pre-coated film is substantially consumed when the etching describedabove in regard to step S107 is completed. There are constraintsaccording to the purpose and application for the thickness of thepre-coated film and the source material and gas type that can be usedfor the pre-coated film. In particular, sections where the pre-coatedfilm is consumed first partway through the etching process are directlyexposed to the plasma. Therefore, it is necessary for the members insidethe chamber 110 to be plasma-resistant. On the other hand, in thecleaning of the chamber 110 (step S113), the cleaning is performed bygenerating plasma. Therefore, it is necessary for the members of theinterior of the chamber 110 to be plasma-resistant.

Conversely, the plasma-resistant member 120 of the embodiment has astructure in which the layer structural component 123 including theyttria polycrystalline body is formed by aerosol deposition at thesurface of the base member 121 including alumina. The layer structuralcomponent 123 of the yttria polycrystalline body formed by aerosoldeposition has a dense structure compared to an yttria sintered body, anyttria thermal-sprayed film, etc. Thereby, the plasma resistance of theplasma-resistant member 120 of the embodiment is higher than the plasmaresistances of the sintered body, the thermal-sprayed film, etc. Also,the probability of the plasma-resistant member 120 of the embodimentbeing a production source of particles is lower than the probability ofthe sintered body, the thermal-sprayed film, etc., being productionsources of particles.

On the other hand, in the case where the interior wall of the chamber110 is covered with the covering film as in the manufacturing processesof the semiconductor described above in regard to FIG. 2, it isnecessary to increase the adhesion strength or adhesion force of thecovering film so that the covering film does not peel easily. Even whenthe reaction products, the particles, etc., are produced in the interiorof the chamber 110, it is necessary for the covering film that coversthe interior of the chamber 110 to cause the reaction products, theparticles, etc., to adhere to the surface of the covering film itselfand be trapped.

Conversely, the plasma-resistant member 120 of the embodiment has arough surface compared to a surface on which polishing is performed. Inother words, there are cases where polishing of the layer structuralcomponent 123 that is formed at the surface of the plasma-resistantmember 120 is performed to further increase the plasma resistance or tofurther increase the sealability of the interior of the chamber 110.Conversely, the plasma-resistant member 120 of the embodiment has arough surface compared to the surface on which the polishing isperformed. Specifically, the layer structural component 123 that isformed at the surface of the plasma-resistant member 120 of theembodiment has an uneven structure.

Thereby, the inventor obtained the knowledge that the particles can bereduced while maintaining the plasma resistance of the plasma-resistantmember 120.

The uneven structure of the layer structural component 123 formed at thesurface of the plasma-resistant member 120 of the embodiment will now bedescribed with reference to the drawings.

FIG. 3 shows photographs of surfaces of the layer structural componentformed at the surface of the plasma-resistant member.

FIG. 4A to FIG. 4F are photographs of enlarged surfaces of the layerstructural component formed at the surface of the plasma-resistantmember.

FIG. 5A and FIG. 5B are photographs showing cross sections of the layerstructural component formed at the surface of the plasma-resistantmember.

FIG. 3 to FIG. 5B are photographs imaged by SEM (a Scanning ElectronMicroscope). FIG. 3 shows very low angle scattering reflection electronimages.

The photograph on the left side of FIG. 3 shows the surface of a layerstructural component 123 c after surface roughening. The photograph onthe right side of FIG. 3 shows the surface of a layer structuralcomponent 123 b after polishing is performed prior to the surfaceroughening. For convenience of description, the layer structuralcomponent after the surface roughening is referred to as the “layerstructural component 123 c” in the following description. The layerstructural component after the polishing is performed prior to thesurface roughening is referred to as the “layer structural component 123b.” The layer structural component in the state as deposited is referredto as the “layer structural component 123 a.” In the specification ofthe application, “as-deposited” refers to the state directly after thelayer structural component including the yttria polycrystalline body isformed at the surface of the base member 121 prior to performing surfacetreatment (e.g., polishing).

FIG. 4A and FIG. 4B are photographs of the enlarged surface of the layerstructural component 123 a as-deposited. FIG. 4C and FIG. 4D arephotographs of the enlarged surface of the layer structural component123 b after the polishing is performed prior to the surface roughening.FIG. 4E and FIG. 4F are photographs of the enlarged surface of the layerstructural component 123 c after the surface roughening. The enlargementratio (10000 times) of the photographs shown in FIG. 4A, FIG. 4C, andFIG. 4E is different from the enlargement ratio (50000 times) shown inFIG. 4B, FIG. 4D, and FIG. 4F. FIG. 4C and FIG. 4E are photographs inwhich a first position of the surface is imaged for the layer structuralcomponents 123 a, 123 b, and 123 c. That is, FIG. 4C is a photographshowing the state in which the polishing is performed for the surface ofthe layer structural component 123 a shown in FIG. 4A. FIG. 4E is aphotograph showing the state in which surface roughening of the surfaceof the layer structural component 123 b shown in FIG. 4C is performed.FIG. 4B, FIG. 4D, and FIG. 4F are photographs in which a second positionof the surface is imaged for the layer structural components 123 a, 123b, and 123 c. That is, FIG. 4D is a photograph showing the state inwhich the polishing is performed for the surface of the layer structuralcomponent 123 a shown in FIG. 4B. FIG. 4F is a photograph showing thestate in which surface roughening of the surface of the layer structuralcomponent 123 b shown in FIG. 4D is performed.

FIG. 5A is a photograph showing the cross section of the layerstructural component 123 b after the polishing is performed prior to thesurface roughening. FIG. 5B is a photograph showing the cross section ofthe layer structural component 123 c after the surface roughening.

The inventor performed the surface roughening of the surface of thelayer structural component 123 b formed at the surface of theplasma-resistant member 120 by performing chemical processing of thelayer structural component 123 b.

In the specification of the application, “chemical processing” refers toprocessing of the surface of the object using a substance that produceshydrogen ions in an aqueous solution. For example, as the chemicalprocessing, surface treatment using an aqueous solution including atleast one of hydrobromic acid, hydroiodic acid, hypochlorous acid,chlorous acid, chloric acid, perchloric acid, sulfuric acid,fluorosulfonic acid, nitric acid, hydrochloric acid, phosphoric acid,fluoroantimonic acid, tetrafluoroboric acid, hexafluorophosphoric acid,chromic acid, boric acid, methanesulfonic acid, ethanesulfonic acid,benzenesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonicacid, polystyrenesulfonic acid, acetic acid, citric acid, formic acid,gluconic acid, lactic acid, oxalic acid, tartaric acid, hydrofluoricacid, carbonic acid, or hydrogen sulfide may be used.

Or, in the specification of the application, “chemical processing”refers to processing of the surface of the object using a substance thatproduces hydroxide ions in an aqueous solution. For example, as thechemical processing, surface treatment using an aqueous solutionincluding at least one of sodium hydroxide, potassium hydroxide,ammonia, calcium hydroxide, barium hydroxide, copper hydroxide, aluminumhydroxide, or iron hydroxide may be used.

The inventor observed the layer structural component 123 b after thepolishing prior to the surface roughening and the layer structuralcomponent 123 c after the surface roughening. The photographs of theimages of the layer structural component 123 b after the polishing priorto the surface roughening and the layer structural component 123 c afterthe surface roughening are as shown in FIG. 3 to FIG. 5B.

In other words, as shown in FIG. 3, the surface of the layer structuralcomponent 123 c for which the chemical processing is performed has moresurface roughening compared to the surface of the layer structuralcomponent 123 b after the polishing is performed prior to the chemicalprocessing being performed. In other words, the surface of the layerstructural component 123 c for which the chemical processing isperformed has a deeper uneven structure than the surface of the layerstructural component 123 b after the polishing is performed prior to thechemical processing being performed.

As shown in FIG. 4A, FIG. 4B, FIG. 4E, FIG. 4F, and FIG. 5B, the layerstructural component 123 a as-deposited and the layer structuralcomponent 123 c for which the chemical processing is performed have arelatively large first uneven structure 125 on the order of severalhundred nm (e.g., about 100 to 500 nm) and a relatively small seconduneven structure 126 on the order of several tens of nm (e.g., about 10to 50 nm). In other words, the first uneven structure 125 has a largewaviness compared to the second uneven structure 126. The second unevenstructure 126 is formed to be superimposed onto the waviness of thefirst uneven structure 125 and has a roughness having a fine unevennesscompared to the first uneven structure 125. For example, in the layerstructural component 123 c for which the chemical processing isperformed, the second uneven structure having the unevenness having thefine crystal particle size is formed on substantially the entire surfaceof the surface of the layer structural component 123 c; and the firstuneven structure having voids where groups of crystal particles detachedis formed here and there on the surface of the layer structuralcomponent 123 c.

The second uneven structure 126 is formed to be superimposed onto thefirst uneven structure 125. Therefore, the layer structural component123 c for which the chemical processing is performed has a structuresimilar to a fractal structure in which the configuration of a portionis similar to the configuration of the entirety.

According to the embodiment, the interior wall of the chamber 110 can becovered substantially uniformly with the covering film to reduce theparticles produced in the manufacturing processes of the semiconductor.The adhesion strength or adhesion force of the covering film can beincreased. As described above, the layer structural components 123 a and123 c have structures (structures similar to a fractal structure) inwhich the relatively small second uneven structure 126 is formed to besuperimposed onto the relatively large first uneven structure 125.Therefore, the anchor effect due to the fine uneven structure isobtained; and a stable adhesion strength or adhesion force for the basemember 121 can be obtained. The covering film that is formed on thelayer structural components 123 a and 123 c for which the anchor effectis obtained can cause the reaction products, the particles, etc., toadhere to the surface of the covering film itself and be trapped withhigher certainty. Thereby, the particles that are produced in themanufacturing processes of the semiconductor can be reduced.

FIG. 6A and FIG. 6B are photographs showing other surfaces of the layerstructural component formed at the surface of the plasma-resistantmember.

FIG. 6A is a photograph showing the surface of the layer structuralcomponent 123 c after a first physical processing is performed. FIG. 6Bis a photograph showing the surface of the layer structural component123 c after a second physical processing is performed.

The inventor performed surface roughening of the surface of the layerstructural component 123 b by performing first physical processing orsecond physical processing of the layer structural component 123 bformed at the surface of the plasma-resistant member 120.

In the specification of the application, “physical processing” refers toprocessing of the surface of the object by at least one of machining,laser patterning, electrical discharge machining, blasting, shotpeening, or plasma processing. The inventor observed the layerstructural component 123 c after the surface roughening. The photographsthat were imaged are as shown in FIG. 6A and FIG. 6B.

The surface of the layer structural component 123 c for which thephysical processing is performed has surface roughening similar to thesurface of the layer structural component 123 c for which the chemicalprocessing is performed and has an uneven structure. Thereby, effectssimilar to those of the layer structural component 123 c for which thechemical processing is performed are obtained.

The results of the inventor investigating the surface state of the layerstructural component will now be described with reference to thedrawings.

FIG. 7A to FIG. 7C are schematic views describing three-dimensionalsurface texture parameters.

FIG. 7A is a graph describing the average swing (arithmetic average) Sain the height direction. FIG. 7B is a graph describing the core materialvolume Vmc and the core void volume Vvc. FIG. 7C is a schematic planview describing the protrusion (or hole) density inside the segmentationthat is defined.

The inventor investigated the expression and evaluation of the surfacestate for the layer structural components 123 a and 123 c formed at thesurface of the plasma-resistant member 120 in a way that includes theentire surfaces of the layer structural components 123 a and 123 c. Asshown in FIG. 7A, first, the inventor measured the average swing(arithmetic average) Sa in the height direction of the surfaces of thelayer structural components 123 a and 123 c using a laser microscope.

An Olympus OLS4000 was used as the laser microscope. The magnificationof the objective lens is 100 times. The zoom is 5 times. The cut-off wasset to 2.5 μm or 0.8 μm.

The arithmetic average Sa is a three-dimensional expansion of atwo-dimensional arithmetic average roughness Ra and is athree-dimensional roughness parameter (a three-dimensional heightdirection parameter). Specifically, the arithmetic average Sa is thevolume of the portion between the surface configuration curved surfaceand the mean plane divided by the measured surface area. The arithmeticaverage Sa is defined by the following formula, where the mean plane isthe xy surface, the vertical direction is the z-axis, and the measuredsurface configuration curve is z(x, y). Here, A in Formula (1) is themeasured surface area.

$\begin{matrix}\left\lbrack {\left. \quad{{Formula}\mspace{14mu} 1} \right\rbrack \; {\quad\mspace{619mu}}} \right. & \; \\{{Sa} = {\frac{1}{A}{\int{\int_{A}{{{z\left( {x,y} \right)}}\ {x}{y}}}}}} & (1)\end{matrix}$

Continuing as shown in FIG. 7B, the inventor investigated the corematerial volume Vmc determined from the load curve and the core voidvolume Vvc determined from the load curve. The parameters relating tothe core material volume Vmc and the core void volume Vvc are defined asin the graph shown in FIG. 7B and are three-dimensional volumeparameters. Namely, the height when the load area ratio is 10% is theboundary between the hill material volume Vmp and the core materialvolume Vmc and the core void volume Vvc. The height when the load arearatio is 80% is the boundary between the dale void volume Vvv and thecore material volume Vmc and the core void volume Vvc. The hill materialvolume Vmp, the core material volume Vmc, the core void volume Vvc, andthe dale void volume Vvv are volumes per unit surface area (units:m³/m²).

Continuing as shown in FIG. 7C, the inventor investigated the density ofprotrusions (or holes) 193 inside the defined segmentation.Specifically, the inventor investigated the protrusion summit densitySds and the developed interfacial area ratio Sdr. The protrusion summitdensity Sds and the developed interfacial area ratio Sdr arethree-dimensional protrusion densities. The protrusion summit densitySds is the number of summits in the unit sampling plane. The protrusionsummit density Sds is expressed by the following formula.

$\begin{matrix}\left\lbrack {\left. \quad{{Formula}\mspace{14mu} 2} \right\rbrack \; {\quad\mspace{619mu}}} \right. & \; \\{S_{ds} = \frac{{Number}\mspace{14mu} {of}\mspace{14mu} {Summits}}{\left( {M - 1} \right){\left( {N - 1} \right) \cdot \Delta}\; {x \cdot \Delta}\; y}} & (2)\end{matrix}$

The protrusion summit density Sds changes according to the definition ofthe summit. Therefore, it is necessary to distinctly define the summitwhen determining the protrusion summit density Sds.

The developed interfacial area ratio Sdr is a parameter of the rate ofincrease of the interface with respect to the sampling plane. Thedeveloped interfacial area ratio Sdr is the value of the sum total ofthe developed area of small interfaces formed of four points divided bythe measured surface area and is defined by the following formula. Here,A in Formula (3) is the surface area of the defined segmentation.

$\begin{matrix}\left\lbrack {\left. \quad{{Formula}\mspace{14mu} 3} \right\rbrack \mspace{11mu} {\quad\mspace{616mu}}} \right. & \; \\{{Sdr} = {\frac{1}{A}\left\lbrack {{\int{\int_{A}^{\;}\sqrt{\left\lbrack {1 + \left( \frac{\partial{Z({xy})}}{\partial x} \right)^{2} + \left( \frac{\partial{Z({xy})}}{\partial y} \right)^{2} +} \right\rbrack}}} - {1\ {x}{y}}} \right\rbrack}} & (3)\end{matrix}$

The inventor determined that it is possible to express and evaluate thesurface states of the layer structural components 123 a and 123 c formedat the surface of the plasma-resistant member 120 in a way that includesthe entire surfaces of the layer structural components 123 a and 123 cby using the arithmetic average Sa, the core material volume Vmc, thecore void volume Vvc, the protrusion summit density Sds, and thedeveloped interfacial area ratio Sdr described above.

FIG. 8 is a graph of the arithmetic average of the surface of the layerstructural component.

The inventor measured the arithmetic average Sa of the surface of thelayer structural component using a laser microscope. The cut-off is 2.5μm. The results are as shown in FIG. 8. The horizontal axis of the graphshown in FIG. 8 is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thevertical axis of the graph shown in FIG. 8 is the arithmetic average Sa(μm).

“Thermal spraying” of the horizontal axis of the graph of FIG. 8 is theyttria thermal-sprayed film. “Mirror surface” of the horizontal axis ofthe graph of FIG. 8 is mirror polishing performed on the surface of thelayer structural component 123 a including the yttria polycrystallinebody.

The layer structural component 123 c described above in regard to FIG. 3to FIG. 5B corresponds to “chemical processing (2)”. The layerstructural component 123 a described above in regard to FIG. 3 to FIG.5B corresponds to “as-deposited.” The layer structural component 123 cdescribed above in regard to FIG. 6A corresponds to “physical processing(1)”. The layer structural component 123 c described above in regard toFIG. 6B corresponds to “physical processing (2)”.

The three curves shown in the graph of FIG. 8 are for the data whenmeasurements are performed three times inside the one sample. That is,the three curves shown in the graph of FIG. 8 are for the number n ofthe measurements (n=3 in the graph of FIG. 8). This is also similar forthe graphs described below in regard to FIG. 9 to FIG. 12B.

According to the graph shown in FIG. 8, the arithmetic average Sa foreach of “chemical processing (1),” “chemical processing (2),”“as-deposited,” “physical processing (1),” and “physical processing (2)”is within the range not less than 0.025 μm and not more than 0.075 μm.In the graph shown in FIG. 8, the arithmetic average Sa of“as-deposited” is 0.026 μm. In the graph shown in FIG. 8, the arithmeticaverage Sa of “physical processing (2)” is 0.030 μm.

FIG. 9 is a graph of the core material volume of the surface of thelayer structural component.

The inventor determined the core material volume Vmc of the surface ofthe layer structural component from the load curve. The cut-off is 2.5μm. The results are as shown in FIG. 9. The horizontal axis of the graphshown in FIG. 9 is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thehorizontal axis of the graph shown in FIG. 9 is similar to thehorizontal axis of the graph shown in FIG. 8. The vertical axis of thegraph shown in FIG. 9 is the core material volume Vmc (μm³/μm²)determined from the load curve.

According to the graph shown in FIG. 9, the core material volume Vmc foreach of “chemical processing (1),” “chemical processing (2),” “chemicalprocessing (3),” “as-deposited,” “physical processing (1),” and“physical processing (2)” is within the range not less than 0.03 μm³/μm²and not more than 0.08 μm³/μm².

FIG. 10 is a graph of the core void volume of the surface of the layerstructural component.

The inventor determined the core void volume Vvc of the surface of thelayer structural component from the load curve. The cut-off is 2.5 μm.The results are as shown in FIG. 10. The horizontal axis of the graphshown in FIG. 10 is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thehorizontal axis of the graph shown in FIG. 10 is similar to thehorizontal axis of the graph shown in FIG. 8. The vertical axis of thegraph shown in FIG. 10 is the core void volume Vvc (μm³/μm²) determinedfrom the load curve.

According to the graph shown in FIG. 10, the core void volume Vvc foreach of “chemical processing (1),” “chemical processing (2),” “chemicalprocessing (3),” “as-deposited,” “physical processing (1),” and“physical processing (2)” is within the range not less than 0.03 μm³/μm²and not more than 0.1 μm³/m².

FIG. 11 is a graph of the density of the protrusion summits of thesurface of the layer structural component.

The inventor determined the protrusion summit density Sds of the surfaceof the layer structural component. The cut-off is 2.5 μm. The resultsare as shown in FIG. 11. The horizontal axis of the graph shown in FIG.11 is the different states of the layer structural component formed atthe surface of the plasma-resistant member 120. The horizontal axis ofthe graph shown in FIG. 11 is similar to the horizontal axis of thegraph shown in FIG. 8. The vertical axis of the graph shown in FIG. 11is the protrusion summit density Sds.

In the graph shown in FIG. 11, a substantial difference was not foundfor the protrusion summit density Sds between the forms of the layerstructural component.

FIG. 12A and FIG. 12B are graphs of the developed interfacial area ratioof the surface of the layer structural component.

FIG. 12A is a graph displaying the developed interfacial area ratiohaving a range not less than 0 and not more than 300. FIG. 12B is agraph displaying an enlarged range of the developed interfacial arearatio of not less than 0 and not more than 35.

The inventor determined the developed interfacial area ratio Sdr of thesurface of the layer structural component. The cut-off is 2.5 μm. Theresults are as shown in FIG. 12A and FIG. 12B. The horizontal axis forthe graphs shown in FIG. 12A and FIG. 12B is the different states of thelayer structural component formed at the surface of the plasma-resistantmember 120. The horizontal axis for the graphs shown in FIG. 12A andFIG. 12B is similar to the horizontal axis of the graph shown in FIG. 8.The vertical axis for the graphs shown in FIG. 12A and FIG. 12B is thedeveloped interfacial area ratio Sdr.

According to the graphs shown in FIG. 12A and FIG. 12B, the developedinterfacial area ratio Sdr for each of “chemical processing (1),”“chemical processing (2),” “chemical processing (3),” “as-deposited,”“physical processing (1),” and “physical processing (2)” is within therange not less than 3 and not more than 28.

The results of the investigations of the state of the interior of thelayer structural component by the inventor will now be described withreference to the drawings.

FIG. 13 is a photograph in which the state of the interior of the layerstructural component of the embodiment is imaged.

FIG. 14 is a photograph in which the internal structure of the layerstructural component of the embodiment is binarized.

FIG. 13 and FIG. 14 are photographs imaged by TEM (Transmission ElectronMicroscope/Hitachi H-9000NAR). The binary processing was performed inregion A12 shown in FIG. 14.

The layer structural component 123 (123 c) shown in FIG. 13 includes theyttria polycrystalline body. The layer structural component 123 (123 c)of the yttria polycrystalline body shown in FIG. 13 is formed by aerosoldeposition. As described above in regard to FIG. 1 and FIG. 2, the layerstructural component 123 of the yttria polycrystalline body formed byaerosol deposition has a dense structure compared to an yttria sinteredbody, an yttria thermal-sprayed film, etc.

On the other hand, a sparse and dense structure exists in the interiorof the layer structural component 123 (123 c) including the yttriapolycrystalline body as in region A11 shown in FIG. 13 and region A12shown in FIG. 14. That is, portions where the density is relativelysparse and portions where the density is relatively dense exist in theinterior of the layer structural component 123 (123 c). In region A12shown in FIG. 14, the sparseness and denseness of the density of theyttria polycrystalline body is illustrated by binarized shading. Theportions having the light color are the portions where the density issparse.

In the case where the interior wall of the chamber 110 is covered withthe covering film as in the manufacturing processes of the semiconductordescribed above in regard to FIG. 2, it is necessary to increase theadhesion strength or adhesion force of the covering film so that thecovering film does not peel easily.

Because the sparse and dense structure of the yttria polycrystallinebody exists in the interior of the layer structural component 123 (123c) shown in FIG. 13, the relatively large first uneven structure 125 onthe order of several hundred nm and the relatively small second unevenstructure 126 on the order of several tens of nm are formed easily bythe chemical processing or the physical processing. In other words,compared to the portions where the density is dense, the portions wherethe density is sparse are eroded easily by the chemical processing, etc.Compared to the portions where the density is dense, the portions wherethe density is sparse are eroded first. Therefore, it is considered thatthe second uneven structure 126 is easily formed to be superimposed ontothe first uneven structure 125. Thereby, the adhesion strength oradhesion force of the covering film can be increased.

As described above in regard to FIG. 4E and FIG. 4F, the first unevenstructure 125 and the second uneven structure 126 are distributed in thesurface of the layer structural component 123 c. On the other hand, asshown in FIG. 13 and FIG. 14, the portions where the density isrelatively sparse and the portions where the density is relatively denseare distributed in the thickness direction (the depth direction) of thelayer structural component 123 c. Thus, the sparse and dense structureof the layer structural component 123 c of the embodiment has astructure in which the sparse portions having densities lower than thedensities of the dense portions are distributed three-dimensionallyinside the dense portions. For example, the layer structural component123 c of the embodiment has a three-dimensional mesh structure. Thelayer structural component 123 c of the embodiment may have an ant-neststructure or a coral-reef structure. Thereby, the adhesion strength oradhesion force of the covering film can be increased further.

FIG. 15A to FIG. 15E are photographs in which the state of the upperportion of the layer structural component of the embodiment is imaged.

FIG. 16A and FIG. 16B are a graph and a table showing an example of thesurface area ratio with respect to the depth position.

FIG. 15A to FIG. 15E are photographs of the state of the upper portion(the upper layer) of the layer structural component of the embodimentimaged by TEM (Hitachi HD-2700). FIG. 16A is a graph of the example ofthe surface area ratio with respect to the depth position. FIG. 16B is atable showing the example of the surface area ratio with respect to thedepth position.

FIG. 15B is a photograph in which region A131 shown in FIG. 15B ofregion A13 shown in FIG. 15A is binarized. FIG. 15C is a photograph inwhich region A132 shown in FIG. 15C of region A13 shown in FIG. 15A isbinarized. FIG. 15D is a photograph in which region A133 shown in FIG.15D of region A13 shown in FIG. 15A is binarized. FIG. 15E is aphotograph in which region A134 shown in FIG. 15E of region A13 shown inFIG. 15A is binarized. That is, the regions where the binary processingis performed are in the order of region A131 shown in FIG. 15B, regionA132 shown in FIG. 15C, region A133 shown in FIG. 15D, and region A134shown in FIG. 15E from the upper layer (the relatively shallow layerfrom the surface) toward the lower layer (the relatively deep layer fromthe surface).

“Depth position (1)” shown in FIG. 16A and FIG. 16B corresponds toregion A131 shown in FIG. 15B. “Depth position (2)” shown in FIG. 16Aand FIG. 16B corresponds to region A132 shown in FIG. 15C. “Depthposition (3)” shown in FIG. 16A and FIG. 16B corresponds to region A133shown in FIG. 15D. “Depth position (4)” shown in FIG. 16A and FIG. 16Bcorresponds to region A134 shown in FIG. 15E.

The layer structural component 123 c shown in FIG. 15A to FIG. 15Eincludes the yttria polycrystalline body. The layer structural component123 c of the yttria polycrystalline body shown in FIG. 15A to FIG. 15Eis formed by aerosol deposition. Chemical processing of the surface ofthe layer structural component 123 c is performed. The sparseness anddenseness of the density of the layer structural component 123 (123 c)including the yttria polycrystalline body is illustrated by binarizedshading. The portions having the light color are the portions where thedensity is sparse.

According to the photographs having the binary processing shown in FIG.15B to FIG. 15E, the portions of the layer structural component 123 cwhere the density is sparse become smaller from the upper layer towardthe lower layer. That is, the recesses of the uneven structure of thelayer structural component 123 c become smaller from the upper layertoward the lower layer. In other words, the fine trenches of the surfaceof the layer structural component 123 c become finer from the upperlayer toward the lower layer.

Specifically, as shown in FIG. 16A and FIG. 16B, the surface area ratioof each of depth positions (1) to (4) are 87.41%, 34.84%, 22.70%, and2.56% and decrease from depth position (1) toward depth position (4).

Thereby, effects similar to the effects described above in regard toFIG. 13 and FIG. 14 are obtained.

The results of investigations of the adhesion strength of the pre-coatedfilm by the inventor will now be described with reference to thedrawings.

FIG. 17 is a schematic perspective view describing the method formeasuring the adhesion strength of the pre-coated film.

FIG. 18A to FIG. 18D are photographs describing the method for measuringthe adhesion strength of the pre-coated film.

FIG. 19A and FIG. 19B are photographs showing optical microscopephotographs.

FIG. 20A and FIG. 20B are photographs in which the peeling region isimaged by SEM.

FIG. 19A is a photograph showing a scratch mark and a peeling region ofthe covering film formed at the surface of the layer structuralcomponent 123 b. FIG. 19B is a photograph showing a scratch mark and apeeling region of the covering film formed at the surface of the layerstructural component 123 c.

FIG. 20A is a photograph in which region A21 shown in FIG. 19A is imagedby SEM. FIG. 20B is a photograph in which region A22 shown in FIG. 19Bis imaged by SEM.

First, the inventor formed the covering film (in this specific example,a film of SiO₂) on the surface of the layer structural component 123 byCVD. The thickness of the covering film is about 0.4 to 0.6 μm.

Continuing, the inventor measured the adhesion strength of thepre-coated film (the covering film) by a method called nanoscratchtesting, etc. Specifically, a Nano Scratch Tester (NST) of CSMInstruments was used as the scratch tester. The loading velocity is 30newton/minute (N/min). As illustrated by arrow A2 shown in FIG. 17, inthis measurement method, the load is applied to the covering film formedat the surface of the layer structural component 123 via an indenter251. Continuing as illustrated by arrow A3 shown in FIG. 17, theindenter 251 is moved along the surface of the layer structuralcomponent 123 and the adhesion strength is measured while continuouslyincreasing the applied load. The material of the tip of the indenter 251is diamond. The curvature radius of the tip of the indenter 251 is 100μm.

Continuing as shown in FIG. 18A, a photograph was acquired by an opticalmicroscope directly before the point where the peeling (the damage) ofsubstantially the entire covering film starts. A scratch mark 141 andpeeling regions 143 are shown in FIG. 18A. Other examples of thephotographs acquired by the optical microscope are as shown in FIG. 19Aand FIG. 19B. As shown in FIG. 20A, it can be seen that peeling occursat the interface between the covering film and the layer structuralcomponent 123 b for the layer structural component 123 b after thepolishing prior to the surface roughening. As shown in FIG. 20B, it canbe seen that peeling occurs at the interface between the covering filmand the layer structural component 123 c for the layer structuralcomponent 123 c after the surface roughening. It was found that there isno covering film in region A23 shown in FIG. 19A.

Continuing as shown in FIG. 18B, an OHP sheet 145 was placed on theacquired optical microscope photograph.

Continuing as shown in FIG. 18C, the peeling regions 143 of the coveringfilm were traced using, for example, a writing implement such as amarker, etc., in a prescribed region having the scratch mark 141 assubstantially the center. In this specific example, a length L1 of oneside of the prescribed region is 70 μm. For the prescribed region, alength L2 of one other side substantially orthogonal to the one side of70 μm is 170 μm.

Continuing as shown in FIG. 18D, the traced peeling regions 143 werefilled using, for example, image processing software; and binaryprocessing of the image was performed. Mitani Corporation's WinROOF Ver.6.5 was utilized as the image processing software.

Continuing, the surface area ratio of the peeling regions 143 of thecovering film was calculated.

FIG. 21A and FIG. 21B are a table and a graph of an example of themeasurement results of the adhesion strength of the pre-coated film.

FIG. 21A is a table showing the example of the measurement results ofthe adhesion strength of the pre-coated film. FIG. 21B is a graph of theexample of the measurement results of the adhesion strength of thepre-coated film.

The inventor calculated the peeling area ratio (%) of the covering film(in this specific example, the film of SiO₂) by the measurement methoddescribed above in regard to FIG. 17 to FIG. 20B. The evaluation of thepeeling area ratio of the film and the adhesion strength of the coveringfilm is as shown in FIG. 21A and FIG. 21B. The horizontal axis of thegraph shown in FIG. 21B is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thevertical axis on the left side of the graph shown in FIG. 21B is thepeeling area ratio (%) of the covering film. The vertical axis on theright side of the graph shown in FIG. 21B is the evaluation of theadhesion strength of the covering film.

The inventor determined the adhesion strength of the covering film to be“superior (◯): OK” in the case where the peeling area ratio of thecovering film is within the range not less than 0% but less than 10%.The inventor determined the adhesion strength of the covering film to be“good (Δ): OK” in the case where the peeling area ratio of the coveringfilm is within the range not less than 10% but less than 20%. Theinventor determined the adhesion strength of the covering film to be “nogood (x): NG” in the case where the peeling area ratio of the coveringfilm is 20% or more. According to FIG. 21A and FIG. 21B, the peelingarea ratio of the covering film for each of “chemical processing (1),”“chemical processing (2),” “as-deposited,” and “physical processing (2)”are within the range not less than 0% but less than 20%.

For “thermal spraying,” the unevenness of the surface of thethermal-sprayed film is severe compared to the other surface treatments;and cracks occurred in the surface of the thermal-sprayed film. Also,many peeling locations exist in the surface of the thermal-sprayed film.Therefore, the peeling area ratio of the covering film for “thermalspraying” was unmeasurable.

FIG. 22A and FIG. 22B are graphs describing the cut-off of the surfaceanalysis.

FIG. 22A is a graph when the cut-off is set to 2.5 μm. FIG. 22B is agraph when the cut-off is set to 0.8 μm.

A profile curve illustrating the cross-sectional configuration of thesurface, a waviness curve illustrating the first uneven structure 125,and a roughness curve illustrating the second uneven structure 126 areshown in each of FIG. 22A and FIG. 22B. As described above in regard toFIG. 4A to FIG. 4F, the first uneven structure 125 has a large wavinesscompared to the second uneven structure 126. The second uneven structure126 has a roughness having a fine unevenness compared to the firstuneven structure 125.

As shown in FIG. 22A, when the cut-off is set to 2.5 μm, the roughnesscurve due to the second uneven structure 126 exists in a rangeoverlapping the waviness curve due to the first uneven structure 125.

Conversely, as shown in FIG. 22B, when the cut-off is set to 0.8 μm, thewaviness curve due to the first uneven structure 125 has a trend similarto the profile curve compared to when the cut-off is set to 2.5 μm. Onthe other hand, the range where the roughness curve due to the seconduneven structure 126 overlaps the waviness curve due to the first unevenstructure 125 is narrow compared to when the cut-off is set to 2.5 μm.

Thereby, it was confirmed that the waviness due to the first unevenstructure 125 and the roughness due to the second uneven structure 126can be isolated more distinctly by setting the cut-off of the surfaceanalysis to 0.8 μm. That is, the first uneven structure 125 and thesecond uneven structure 126 can be discriminated more distinctly bysetting the cut-off of the surface analysis to 0.8 μm.

FIG. 23A and FIG. 23B are graphs of the arithmetic average of thesurface of the layer structural component.

The inventor set the cut-off to 0.8 μm and measured the arithmeticaverage Sa of the surface of the layer structural component using alaser microscope. The results are as shown in FIG. 23A and FIG. 23B.

FIG. 23A is a graph of the arithmetic average of the first unevenstructure 125. FIG. 23B is a graph of the arithmetic average of thesecond uneven structure 126. The horizontal axis for the graphs shown inFIG. 23A and FIG. 23B is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thehorizontal axis for the graphs shown in FIG. 23A and FIG. 23B is similarto the horizontal axis of the graph shown in FIG. 8. The vertical axisfor the graphs shown in FIG. 23A and FIG. 23B is the arithmetic averageSa (μm).

According to the graph shown in FIG. 23B, the arithmetic average Sa ofthe second uneven structure 126 for each of “chemical processing (1),”“chemical processing (2),” “chemical processing (3),” “as-deposited,”“physical processing (1),” and “physical processing (2)” is within therange not less than 0.010 μm and not more than 0.035 μm.

FIG. 24A and FIG. 24B are graphs of the core material volume of thesurface of the layer structural component.

The inventor set the cut-off to 0.8 μm and determined the core materialvolume Vmc of the surface of the layer structural component from theload curve. The results are as shown in FIG. 24A and FIG. 24B.

FIG. 24A is a graph of the core material volume of the first unevenstructure 125. FIG. 24B is a graph of the core material volume of thesecond uneven structure 126. The horizontal axis for the graphs shown inFIG. 24A and FIG. 24B is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thehorizontal axis for the graphs shown in FIG. 24A and FIG. 24B is similarto the horizontal axis of the graph shown in FIG. 8. The vertical axisfor the graphs shown in FIG. 24A and FIG. 24B is the core materialvolume Vmc (μm³/μm²) determined from the load curve.

According to the graph shown in FIG. 24B, the core material volume Vmcof the second uneven structure 126 for each of “chemical processing(1),” “chemical processing (2),” “chemical processing (3),”“as-deposited,” “physical processing (1),” and “physical processing (2)”is within the range not less than 0.01 m³/μm² and not more than 0.035m³/m².

FIG. 25A and FIG. 25B are graphs of the core void volume of the surfaceof the layer structural component.

The inventor set the cut-off to 0.8 μm and determined the core voidvolume Vvc of the surface of the layer structural component from theload curve. The results are as shown in FIG. 25A and FIG. 25B.

FIG. 25A is a graph of the core void volume of the first unevenstructure 125. FIG. 25B is a graph of the core void volume of the seconduneven structure 126. The horizontal axis for the graphs shown in FIG.25A and FIG. 25B is the different states of the layer structuralcomponent formed at the surface of the plasma-resistant member 120. Thehorizontal axis for the graphs shown in FIG. 25A and FIG. 25B is similarto the horizontal axis of the graph shown in FIG. 8. The vertical axisfor the graphs shown in FIG. 25A and FIG. 25B is the core void volumeVvc (μm³/μm²) determined from the load curve.

According to FIG. 25B, the core void volume Vvc of the second unevenstructure 126 for each of “chemical processing (1),” “chemicalprocessing (2),” “chemical processing (3),” “as-deposited,” “physicalprocessing (1),” and “physical processing (2)” is within the range notless than 0.012 m³/μm² and not more than 0.05 μm³/μm².

FIG. 26A and FIG. 26B are graphs of the developed interfacial area ratioof the surface of the layer structural component.

The inventor set the cut-off to 0.8 μm and determined the developedinterfacial area ratio Sdr of the surface of the layer structuralcomponent. The results are as shown in FIG. 26A and FIG. 26B.

FIG. 26A is a graph of the developed interfacial area ratio of the firstuneven structure 125. FIG. 26B is a graph of the developed interfacialarea ratio of the second uneven structure 126. The horizontal axis forthe graphs shown in FIG. 26A and FIG. 26B is the different states of thelayer structural component formed at the surface of the plasma-resistantmember 120. The horizontal axis for the graphs shown in FIG. 26A andFIG. 26B is similar to the horizontal axis of the graph shown in FIG. 8.The vertical axis for the graphs shown in FIG. 26A and FIG. 26B is thedeveloped interfacial area ratio Sdr.

According to FIG. 26B, the developed interfacial area ratio Sdr of thesecond uneven structure 126 for each of “chemical processing (1),”“chemical processing (2),” “chemical processing (3),” “as-deposited,”“physical processing (1),” and “physical processing (2)” is within therange not less than 1 and not more than 17.

FIG. 27A and FIG. 27B are graphs of the root mean square slope of thesurface of the layer structural component.

The inventor set the cut-off to 0.8 μm and determined the root meansquare slope SΔq of the surface of the layer structural component. Theresults are as shown in FIG. 27A and FIG. 27B.

FIG. 27A is a graph of the root mean square slope of the first unevenstructure 125.

FIG. 27B is a graph of the root mean square slope of the second unevenstructure 126. The horizontal axis for the graphs shown in FIG. 27A andFIG. 27B is the different states of the layer structural componentformed at the surface of the plasma-resistant member 120. The horizontalaxis for the graphs shown in FIG. 27A and FIG. 27B is similar to thehorizontal axis of the graph shown in FIG. 8. The vertical axis for thegraphs shown in FIG. 27A and FIG. 27B is the root mean square slope SΔq.

The root mean square slope SΔd is a two-dimensional mean square slopeangle Δq for the sampling plane. The surface slope is expressed by thefollowing formula for all sorts of points.

$\begin{matrix}\left\lbrack {\left. \quad{{Formula}\mspace{14mu} 4} \right\rbrack \mspace{11mu} {\quad\mspace{616mu}}} \right. & \; \\\begin{matrix}{\rho_{ij} = \left. \left\lbrack {\left( \frac{\partial{Z\left( {x,y} \right)}}{\partial x} \right)^{2} + \left( \frac{\partial{Z\left( {x,y} \right)}}{\partial y} \right)^{2} +} \right\rbrack^{1/2} \right|_{{x = x_{i}},{y = y_{j}}}} \\{\approx \left\lbrack {\left( \frac{{Z\left( {x_{i},y_{j}} \right)} - {Z\left( {x_{i - 1},y_{j}} \right)}}{\Delta \; x} \right)^{2} + \left( \frac{{Z\left( {x_{i},y_{j}} \right)} - {Z\left( {x_{i},y_{j - 1}} \right)}}{\Delta \; y} \right)^{2}} \right\rbrack^{1/2}}\end{matrix} & (4)\end{matrix}$

Therefore, the root mean square slope SΔq is expressed by the followingformula.

$\begin{matrix}\left\lbrack {\left. \quad{{Formula}\mspace{14mu} 5} \right\rbrack \mspace{25mu} {\quad\mspace{599mu}}} \right. & \; \\\begin{matrix}{S_{\Delta \; q} = \sqrt{\frac{1}{\left( {M - 1} \right)\left( {N - 1} \right)}{\sum\limits_{j = 2}^{N}\; {\sum\limits_{i = 2}^{M}\; \rho_{ij}^{2}}}}} \\{\approx \sqrt{\frac{1}{\left( {M - 1} \right)\left( {N - 1} \right)}{\sum\limits_{j = 2}^{N}\; {\sum\limits_{i = 2}^{M}\; \begin{bmatrix}{\left( \frac{{Z\left( {x_{i},y_{j}} \right)} - {Z\left( {x_{i - 1},y_{j}} \right)}}{\Delta \; x} \right)^{2} +} \\\left( \frac{{Z\left( {x_{i},y_{j}} \right)} - {Z\left( {x_{i},y_{j - 1}} \right)}}{\Delta \; y} \right)^{2}\end{bmatrix}}}}}\end{matrix} & (5)\end{matrix}$

According to FIG. 27B, the root mean square slope SΔq of the seconduneven structure 126 for each of “chemical processing (1),” “chemicalprocessing (2),” “chemical processing (3),” “as-deposited,” “physicalprocessing (1),” and “physical processing (2)” is within the range notless than 0.15 and not more than 0.6.

FIG. 28 is a table showing an example of the measurement result of theadhesion strength of the pre-coated film.

The inventor set the cut-off to 0.8 μm and calculated the peeling arearatio (%) of the covering film (in this specific example, a film ofSiO₂) by the measurement method described above in regard to FIG. 17 toFIG. 20B. The evaluation of the peeling area ratio of the covering filmand the adhesion strength of the covering film is as shown in FIG. 28.The determination standard of the evaluation of the adhesion strength ofthe covering film is as described above in regard to FIG. 21A and FIG.21B.

According to FIG. 28, the peeling area ratio of the covering film foreach of “chemical processing (1),” “chemical processing (2),”“as-deposited,” and “physical processing (2)” is within the range notless than 0% but less than 20%.

“Thermal spraying” was unmeasurable due to the reasons described abovein regard to FIG. 21A and FIG. 21B.

The aerosol deposition will now be described further.

FIG. 29 is a photograph in which the interior of the layer structuralcomponent of the embodiment is imaged.

FIG. 30 is a table comparing the average crystal particle sizes fordifferent methods for forming the layer structural component.

As described above in regard to FIG. 1, the layer structural component123 is formed by aerosol deposition. According to aerosol deposition, aheating unit or the like is not particularly necessary; and it ispossible to form the layer structural component 123 at room temperature.Therefore, a grain boundary layer does not exist at the interfacebetween the layer structural component 123 (123 a) and the base member121 or in the interior of the layer structural component 123 (123 a).

FIG. 29 is a photograph imaged by TEM. In the photograph shown in FIG.29, the layer structural component 123 of the yttria polycrystallinebody is formed by aerosol deposition on the surface of the base member121 of quartz. According to the photograph shown in FIG. 29, a grainboundary layer does not exist at the interface between the layerstructural component 123 (123 a) and the base member 121 or in theinterior of the layer structural component 123 (123 a). An amorphousphase or an unusual phase was not induced.

Thereby, the existence or absence of the grain boundary layer can be onedetermination criteria of whether or not the layer structural component123 is formed by aerosol deposition.

In aerosol deposition (AD), the fine particles are deformed orfragmented without a heating process. Therefore, in the case wherecrystalline brittle material fine particles are used as the sourcematerial for the hybrid structural component formed by aerosoldeposition, the crystal particle size of the portion of the layerstructural component 123 of the hybrid structural component is smallcompared to the source material fine particle size, the crystal particlesize of a sintered body, and the crystal particle size of athermal-sprayed film.

As in the photograph shown in FIG. 29, the crystal particle size of theyttria polycrystalline body was about 15 to 20 nm. As in the comparisontable shown in FIG. 30, the average crystal particle size of the yttriapolycrystalline body formed by aerosol deposition (AD) was 19 nm ascalculated by XRD (X-ray Diffraction) analysis.

On the other hand, the average crystal particle size of the yttriasintered body was 218 nm. The average crystal particle size of theyttria thermal-sprayed film was 71 nm. That is, the average crystalparticle size of the yttria polycrystalline body formed by aerosoldeposition is about 15 to 20 nm and is smaller than the average crystalparticle size of the yttria sintered body and the average crystalparticle size of the yttria thermal-sprayed film.

Thereby, the average crystal particle size can be one determinationcriteria of whether or not the layer structural component 123 is formedby aerosol deposition.

In the embodiment, the diameter of the average crystal particle isnormally not less than 5 nanometers (nm) and not more than 50 nanometers(nm). It is more favorable for the diameter of the average crystalparticle to be 30 nanometers (nm) or less.

FIG. 31 is a graph of an example of the results of XRD measurements ofthe layer structural component formed by aerosol deposition.

In the case where crystalline brittle material fine particles are usedas the source material for the hybrid structural component formed byaerosol deposition, the crystal has no orientation. Conversely, in thecase where crystalline brittle material fine particles are used as thesource material for the hybrid structural component formed by CVD(Chemical Vapor Deposition), etc., the crystal has an orientation.

As in the graph shown in FIG. 31, the crystal structure of the layerstructural component 123 formed by aerosol deposition has a mixedcrystal structure including a cubic crystal and a monoclinic crystal.The crystal of the layer structural component 123 formed by aerosoldeposition does not have an orientation.

Thereby, the existence or absence of the orientation of the crystal canbe one determination criteria of whether or not the layer structuralcomponent 123 is formed by aerosol deposition.

FIG. 32 is a photograph in which another part of the interior of thelayer structural component of the embodiment is imaged.

FIG. 32 is a photograph imaged by TEM. In the photograph shown in FIG.32, the layer structural component 123 of the yttria polycrystallinebody is formed by aerosol deposition on the surface of the base member121 of quartz. An anchor layer 128 that juts into the surface of thebase member 121 is formed at the portion of the layer structuralcomponent 123. The layer structural component 123 in which the anchorlayer 128 is formed is securely adhered to the base member 121 withexceedingly high strength.

Hereinabove, embodiments of the invention are described. However, theinvention is not limited to these descriptions. Appropriate designmodifications to the embodiments described above made by one skilled inthe art also are within the scope of the invention to the extent thatthe features of the invention are included. For example, theconfigurations, dimensions, materials, arrangements, etc., of thecomponents included in the semiconductor manufacturing apparatus 100,etc., the mounting forms of the plasma-resistant member 120 and theelectrostatic chuck 160, etc., are not limited to the illustrations andcan be modified appropriately.

The components included in the embodiments described above can becombined to the extent of technical feasibility; and such combinationsare within the scope of the invention to the extent that the features ofthe invention are included.

INDUSTRIAL APPLICABILITY

According to an aspect of the invention, a plasma-resistant member isprovided that can reduce particles or increase the adhesion strength oradhesion force of a covering film that covers the interior wall of achamber.

REFERENCE SIGNS LIST

-   100 semiconductor manufacturing apparatus-   110 chamber-   120 plasma-resistant member-   121 base member-   123, 123 a, 123 b, 123 c layer structural component-   125 first uneven structure-   126 second uneven structure-   128 anchor layer-   141 scratch mark-   143 peeling regions-   145 OHP sheet-   160 electrostatic chuck-   191 region-   193 protrusions (or holes)-   210 wafer-   221 particles-   251 indenter

1. A plasma-resistant member, comprising: a base member; and a layerstructural component formed at a surface of the base member, the layerstructural component including an yttria polycrystalline body and beingplasma resistant, the layer structural component including a firstuneven structure, and a second uneven structure formed to besuperimposed onto the first uneven structure, the second unevenstructure having an unevenness finer than an unevenness of the firstuneven structure.
 2. The plasma-resistant member according to claim 1,wherein the first uneven structure has voids made in a portion of asurface of the layer structural component, the voids being where groupsof crystal particles detached, and the second uneven structure has anunevenness formed in the entire surface of the layer structuralcomponent, a size of the crystal particles of the unevenness being fine.3. The plasma-resistant member according to claim 1, wherein thearithmetic average Sa of a surface of the layer structural component isnot less than 0.025 μm and not more than 0.075 μm, the core materialvolume Vmc determined from a load curve of the surface of the layerstructural component is not less than 0.03 μm³/μm² and not more than0.08 m³/μm², the core void volume Vvc determined from the load curve ofthe surface of the layer structural component is not less than 0.03μm³/μm² and not more than 0.1 μm³/μm², and the developed interfacialarea ratio Sdr of the surface of the layer structural component is notless than 3 and not more than
 28. 4. The plasma-resistant memberaccording to claim 1, wherein the first uneven structure and the seconduneven structure are formed by performing chemical processing.
 5. Theplasma-resistant member according to claim 1, wherein the layerstructural component has a sparse and dense structure of the yttriapolycrystalline body.
 6. The plasma-resistant member according to claim5, wherein sparse portions of the sparse and dense structure becomesmaller from a layer at a surface of the layer structural componenttoward a layer deeper than the layer at the surface.
 7. Theplasma-resistant member according to claim 5, wherein the sparse anddense structure includes sparse portions distributed three-dimensionallyinside a dense portion, a density of the sparse portions being lowerthan a density of the dense portion.
 8. The plasma-resistant memberaccording to claim 1, wherein the layer structural component is formedby aerosol deposition.
 9. A plasma-resistant member, comprising: a basemember; and a layer structural component formed at a surface of the basemember, the layer structural component including an yttriapolycrystalline body and being plasma resistant, in the case where acut-off of surface analysis is 0.8 m: the arithmetic average Sa of asurface of the layer structural component being not less than 0.010 Jimand not more than 0.035 μm; the core material volume Vmc determined froma load curve of the surface of the layer structural component being notless than 0.01 μm³/μm² and not more than 0.035 μm³/μm²; the core voidvolume Vvc determined from the load curve of the surface of the layerstructural component is not less than 0.012 μm³/μm² and not more than0.05 μm³/μm²; the developed interfacial area ratio Sdr of the surface ofthe layer structural component is not less than 1 and not more than 17;and the root mean square slope SΔq of the surface of the layerstructural component is not less than 0.15 and not more than 0.6. 10.The plasma-resistant member according to claim 9, wherein the layerstructural component has a sparse and dense structure of the yttriapolycrystalline body.
 11. The plasma-resistant member according to claim10, wherein sparse portions of the sparse and dense structure becomesmaller from a layer at the surface of the layer structural componenttoward a layer deeper than the layer at the surface.
 12. Theplasma-resistant member according to claim 10, wherein the sparse anddense structure includes sparse portions distributed three-dimensionallyinside a dense portion, a density of the sparse portions being lowerthan a density of the dense portion.
 13. The plasma-resistant memberaccording to claim 9, wherein the layer structural component is formedby aerosol deposition.